BFQ149,115

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BFQ149,115 - NXP
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Краткое описание: PNP BJT 15V 100mA 5GHz SOT-89 Transistor
Производитель NXP
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a SOT-89 surface mount package. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 15V. Operates at a maximum frequency of 5GHz with a gain of 12dB. Offers a maximum power dissipation of 1W and an operating temperature range of -65°C to 150°C. Compliant with RoHS standards.
Gain 12dB
RoHS Compliant
Mount Surface Mount
Width 2.6mm
Height 1.6mm
Length 4.6mm
Polarity PNP
Frequency 5GHz
Lead Free Lead Free
Packaging Tape and Reel
Output Power 1W
Package/Case SOT-89
Max Frequency 5GHz
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 1
Power Dissipation 1W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 5GHz
Max Breakdown Voltage 15V
Max Collector Current 100mA
Max Power Dissipation 1W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 20V
Collector Emitter Voltage (VCEO) 15V
Collector Emitter Breakdown Voltage 15V

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