BFR106E6327HTSA1
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Краткое описание:
RF Transistor NPN 5GHz 15V 210mA SOT-23
Дополнительная информация
NPN RF BJT transistor for surface mount applications, featuring a 5GHz transition frequency and 13dB power gain. This component offers a maximum collector current of 210mA and a maximum power dissipation of 700mW. Operating across a temperature range of -55°C to 150°C, it boasts a collector-emitter breakdown voltage of 15V and a noise figure of 1.8dB. Packaged in a 3-pin SOT-23, it is RoHS compliant with tin, matte contact plating.
| Gain | 13dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| hFE Min | 70 |
| Polarity | NPN |
| Frequency | 5GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Gain | 13dB |
| Halogen Free | Not Halogen Free |
| Noise Figure | 1.8dB |
| Package/Case | SOT |
| Max Frequency | 5GHz |
| Current Rating | 210mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 15V |
| Package Quantity | 1 |
| Power Dissipation | 700mW |
| Number of Elements | 1 |
| Transition Frequency | 5GHz |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 210mA |
| Max Power Dissipation | 700mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 3V |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector Emitter Breakdown Voltage | 15V |
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