BFR181WH6327XTSA1
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Краткое описание:
RF Transistor NPN 12V 8GHz 175mW SOT-323 SMD
Дополнительная информация
RF Transistor, NPN, SOT-323 package, featuring a 12V collector-emitter breakdown voltage and 20mA max collector current. This surface mount device operates with a 20V collector-base voltage and 2V emitter-base voltage. It offers an 8GHz transition frequency and 19dB power gain at 900MHz, with a noise figure of 0.9dB. Rated for 175mW power dissipation, it operates from -65°C to 150°C and is RoHS compliant.
| Gain | 19dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 50 |
| Polarity | NPN |
| Frequency | 8GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Gain | 19dB |
| Termination | SMD/SMT |
| Halogen Free | Halogen Free |
| Noise Figure | 0.9dB |
| Package/Case | SOT |
| RoHS Compliant | Yes |
| Test Frequency | 900MHz |
| Package Quantity | 3000 |
| Power Dissipation | 175mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 8GHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 20mA |
| Max Power Dissipation | 175mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 2V |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
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