BFR182E6327HTSA1
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RF NPN BJT Transistor, 12V, 35mA, 250mW, SOT-23
Дополнительная информация
NPN RF BJT transistor for surface mount applications. Features a 12V maximum collector-emitter voltage and 0.035A maximum DC collector current. Offers 250mW maximum power dissipation and a minimum DC current gain of 70 at 10mA/8V. Operates with a typical transition frequency of 8000MHz and a minimum noise figure of 1.3dB. Housed in a 3-pin SOT-23 (TO-236AA) plastic package with gull-wing leads.
| PCB | 3 |
| ECCN | EAR99 |
| Type | NPN |
| Jedec | TO-236AA |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Package/Case | SOT-23 |
| AEC Qualified | Yes |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.3 |
| Typical Power Gain | 18dB |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT |
| Package Height (mm) | 1(Max) |
| Package Length (mm) | 2.9 |
| Package Orientation | Yes |
| Maximum Noise Figure | 1.3(Min)dB |
| Minimum DC Current Gain | 70@10mA@8V |
| Seated Plane Height (mm) | 1 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 250mW |
| Min Operating Temperature | -65°C |
| Typical Input Capacitance | 0.8pF |
| Typical Output Capacitance | 0.32pF |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 8V/10mA |
| Maximum DC Collector Current | 0.035A |
| Maximum Emitter Base Voltage | 2V |
| Maximum Transition Frequency | 8000(Typ)MHz |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Collector Base Voltage | 20V |
| Package Orientation Marking Type | Beveled Edge |
| Maximum Collector-Emitter Voltage | 12V |
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