BFR193E6327HTSA1
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Краткое описание:
RF NPN BJT Transistor SOT-23, 12V, 8000MHz, 0.08A
Дополнительная информация
NPN RF Bipolar Junction Transistor (BJT) designed for high-frequency applications. Features a maximum collector-emitter voltage of 12V and a maximum DC collector current of 0.08A. Offers a typical transition frequency of 8000MHz and a typical noise figure of 1.6dB. Packaged in a 3-pin SOT-23 (TO-236AA) surface-mount plastic housing with gull-wing leads. Operates within a temperature range of -55°C to 150°C.
| PCB | 3 |
| ECCN | EAR99 |
| Type | NPN |
| Jedec | TO-236AA |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Package/Case | SOT-23 |
| AEC Qualified | Yes |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 1.3 |
| Typical Power Gain | 15dB |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT-23 |
| Package Height (mm) | 1(Max) |
| Package Length (mm) | 2.9 |
| Maximum Noise Figure | 1.6(Typ)dB |
| Minimum DC Current Gain | 70@30mA@8V |
| Seated Plane Height (mm) | 1 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 580mW |
| Min Operating Temperature | -55°C |
| Typical Input Capacitance | 2.25pF |
| Typical Output Capacitance | 0.66pF |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 8V/30mA |
| Maximum DC Collector Current | 0.08A |
| Maximum Emitter Base Voltage | 2V |
| Maximum Transition Frequency | 8000(Typ)MHz |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Collector Base Voltage | 20V |
| Maximum Collector-Emitter Voltage | 12V |
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