BFR193FH6327XTSA1

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BFR193FH6327XTSA1 - Infineon
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Краткое описание: RF Transistor NPN 8GHz 12V 80mA SOT-723 SM T/R
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

RF NPN Bipolar Junction Transistor for surface mount applications. Features a maximum collector current of 80mA and a maximum operating frequency of 8GHz, with a power gain of 19dB and a noise figure of 1dB. This device offers a collector-emitter breakdown voltage of 12V and operates within a temperature range of -55°C to 150°C. Packaged in a compact 1.2mm x 0.8mm x 0.55mm TSFP (SOT-723) case, it is supplied on tape and reel.
Gain 12.5dB
RoHS Compliant
Mount Surface Mount
Width 0.8mm
Height 0.55mm
Length 1.2mm
Lead Free Lead Free
Packaging Tape and Reel
Power Gain 19dB
Halogen Free Halogen Free
Noise Figure 1dB
Package/Case SOT-723
Max Frequency 8GHz
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 3000
Transition Frequency 8GHz
Max Breakdown Voltage 12V
Max Collector Current 80mA
Max Power Dissipation 580mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 2V
Collector Base Voltage (VCBO) 20V
Collector Emitter Breakdown Voltage 12V

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