BFR193WH6327XTSA1

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BFR193WH6327XTSA1 - Infineon
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Краткое описание: NPN RF Transistor SOT-323 8GHz 16dB 80mA 580mW
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The BFR193WH6327XTSA1 is a surface mount NPN RF transistor with a maximum collector current of 80mA and a maximum power dissipation of 580mW. It has a maximum operating temperature range of -55°C to 150°C and is compliant with RoHS regulations. The transistor has a transition frequency of 8GHz and a gain of 16dB. It is packaged in a SOT-323 package and is available on tape and reel.
Gain 16dB
RoHS Compliant
Mount Surface Mount
Polarity NPN
Frequency 8GHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT
RoHS Compliant Yes
Power Dissipation 580mW
Number of Elements 1
Transition Frequency 8GHz
Max Breakdown Voltage 12V
Max Collector Current 80mA
Max Power Dissipation 580mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 2V
Collector Base Voltage (VCBO) 20V
Collector Emitter Voltage (VCEO) 12V
Collector Emitter Breakdown Voltage 12V

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