BFR35APE6327HTSA1

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BFR35APE6327HTSA1 - Infineon
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Краткое описание: RF NPN Transistor SOT-23 15V 45mA 5GHz 3-Pin SM
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF Bipolar Junction Transistor for surface mount applications. Features a 15V maximum collector-emitter voltage and 45mA maximum DC collector current. This single-element transistor offers a minimum DC current gain of 70 at 15mA/8V, with a typical transition frequency of 5000MHz and a typical noise figure of 2dB. Housed in a 3-pin SOT-23 (TO-236AA) plastic package with gull-wing leads, it operates within a temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
Type NPN
Jedec TO-236AA
EU RoHS Yes
HTS Code 8541210075
Material Si
Mounting Surface Mount
Cage Code CG091
Pin Count 3
Automotive Yes
Lead Shape Gull-wing
Package/Case SOT-23
AEC Qualified Yes
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.3
Typical Power Gain 16dB
Package Description Small Outline Transistor
Package Family Name SOT-23
Package Height (mm) 1(Max)
Package Length (mm) 2.9
Maximum Noise Figure 2(Typ)dB
Minimum DC Current Gain 70@15mA@8V
Seated Plane Height (mm) 1
Max Operating Temperature 150°C
Maximum Power Dissipation 280mW
Min Operating Temperature -55°C
Typical Input Capacitance 0.64pF
Typical Output Capacitance 0.39pF
Number of Elements per Chip 1
Operational Bias Conditions 8V/15mA
Maximum DC Collector Current 0.045A
Maximum Emitter Base Voltage 2.5V
Maximum Transition Frequency 5000(Typ)MHz
Minimum DC Current Gain Range 50 to 120
Maximum Collector Base Voltage 20V
Maximum Collector-Emitter Voltage 15V

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