BFR360FH6327XTSA1

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BFR360FH6327XTSA1 - Infineon
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Краткое описание: RF NPN BJT Transistor 14GHz 6V 35mA 210mW SOT-723
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF Bipolar Junction Transistor designed for high-frequency applications, featuring a 14GHz transition frequency and 15.5dB gain. This surface-mount component operates with a maximum collector current of 35mA and a collector-emitter voltage of 6V, with a maximum power dissipation of 210mW. It is housed in a compact 3-pin TSFP package (SOT-723) and offers a wide operating temperature range from -55°C to 150°C. The transistor is RoHS compliant, lead-free, and halogen-free, with tin-matte contact plating.
Gain 15.5dB
RoHS Compliant
Mount Surface Mount
Polarity NPN
Frequency 14GHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-723
RoHS Compliant Yes
Contact Plating Tin, Matte
Power Dissipation 210mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 14GHz
Max Breakdown Voltage 9V
Max Collector Current 35mA
Max Power Dissipation 210mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 2V
Collector Base Voltage (VCBO) 15V
Collector Emitter Voltage (VCEO) 6V
Collector Emitter Breakdown Voltage 9V

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