BFR92PE6327HTSA1

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BFR92PE6327HTSA1 - Infineon
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Краткое описание: RF NPN BJT Transistor, 15V, 45mA, 280mW, SOT-23
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 15V and a maximum DC collector current of 0.045A. Offers a maximum power dissipation of 280mW and a typical transition frequency of 5000MHz. Housed in a 3-pin SOT-23 (TO-236AA) plastic package with gull-wing leads, measuring 2.9mm x 1.3mm x 1mm. Operates within a temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
Type NPN
Jedec TO-236AA
EU RoHS Yes
HTS Code 8541210075
Material Si
Mounting Surface Mount
Cage Code CG091
Pin Count 3
Automotive Yes
Lead Shape Gull-wing
Package/Case SOT-23
AEC Qualified Yes
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.3
Typical Power Gain 16dB
Package Description Small Outline Transistor
Package Family Name SOT
Package Height (mm) 1(Max)
Package Length (mm) 2.9
Package Orientation Yes
Maximum Noise Figure 2(Min)dB
Minimum DC Current Gain 70@15mA@8V
Seated Plane Height (mm) 1
Max Operating Temperature 150°C
Maximum Power Dissipation 280mW
Min Operating Temperature -55°C
Typical Input Capacitance 0.64pF
Typical Output Capacitance 0.39pF
Number of Elements per Chip 1
Operational Bias Conditions 8V/15mA
Maximum DC Collector Current 0.045A
Maximum Emitter Base Voltage 2.5V
Maximum Transition Frequency 5000(Typ)MHz
Minimum DC Current Gain Range 50 to 120
Maximum Collector Base Voltage 20V
Package Orientation Marking Type Beveled Edge
Maximum Collector-Emitter Voltage 15V

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