BFR93AE6327HTSA1

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BFR93AE6327HTSA1 - Infineon
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Краткое описание: RF NPN BJT Transistor SOT-23 12V 0.09A 300mW Si SM
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF Bipolar Junction Transistor (BJT) designed for high-frequency applications. Features a maximum collector-emitter voltage of 12V and a maximum collector current of 0.09A. Offers a maximum power dissipation of 300mW and a typical transition frequency of 6000MHz. Packaged in a 3-pin SOT-23 (TO-236AA) surface-mount plastic package with gull-wing leads. Operates across a temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
Type NPN
Jedec TO-236AA
EU RoHS Yes
HTS Code 8541210075
Material Si
Mounting Surface Mount
Cage Code CG091
Pin Count 3
Automotive Yes
Lead Shape Gull-wing
Package/Case SOT-23
AEC Qualified Yes
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.3
Typical Power Gain 14.5dB
Package Description Small Outline Transistor
Package Family Name SOT
Package Height (mm) 1(Max)
Package Length (mm) 2.9
Package Orientation Yes
Maximum Noise Figure 2.6(Typ)dB
Minimum DC Current Gain 70@30mA@8V
Seated Plane Height (mm) 1
Max Operating Temperature 150°C
Maximum Power Dissipation 300mW
Min Operating Temperature -55°C
Typical Input Capacitance 1.9pF
Typical Output Capacitance 0.54pF
Number of Elements per Chip 1
Operational Bias Conditions 8V/30mA
Maximum DC Collector Current 0.09A
Maximum Emitter Base Voltage 2V
Maximum Transition Frequency 6000(Typ)MHz
Maximum Power 1dB Compression 6(Typ)dBm
Minimum DC Current Gain Range 50 to 120
Maximum Collector Base Voltage 20V
Package Orientation Marking Type Beveled Edge
Maximum 3rd Order Intercept Point 15(Typ)dBm
Maximum Collector-Emitter Voltage 12V

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