BFR93AWH6327XTSA1
Производится
Увеличить
Краткое описание:
RF NPN Transistor, 6GHz, 12V VCEO, 90mA IC, SOT, SM
Дополнительная информация
NPN RF small signal bipolar transistor for L-band applications. Features a 12V collector-emitter breakdown voltage and a maximum collector current of 90mA. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 300mW. This surface-mount device, housed in a SOT package, offers a transition frequency of 6GHz and a gain of 15.5dB. It is RoHS compliant, lead-free, and halogen-free with tin, matte contact plating.
| Gain | 15.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Halogen Free | Halogen Free |
| Package/Case | SOT |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Transition Frequency | 6GHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 90mA |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
