BFS483H6327XTSA1

Производится
BFS483H6327XTSA1 - Infineon
Увеличить
Краткое описание: RF Transistor NPN 8GHz 12V 65mA SOT-363 Surface Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

RF BJT NPN transistor featuring a 12V collector-emitter breakdown voltage and 65mA maximum collector current. This surface mount component operates up to 8GHz with a gain of 19dB, housed in a compact 6-pin SOT-363 package. Designed for automotive applications, it offers a wide operating temperature range from -65°C to 150°C and a maximum power dissipation of 450mW. The component is RoHS and REACH SVHC compliant, supplied in tape and reel packaging.
Gain 19dB
RoHS Compliant
Mount Surface Mount
Width 1.25mm
Height 0.8mm
Length 2mm
Packaging Tape and Reel
Package/Case SOT-363-6
Max Frequency 8GHz
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 3000
Reach SVHC Compliant Yes
Transition Frequency 8GHz
Max Breakdown Voltage 12V
Max Collector Current 65mA
Max Power Dissipation 450mW
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 2V
Collector Base Voltage (VCBO) 20V
Collector Emitter Breakdown Voltage 12V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.