BFT25A,215
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Краткое описание:
RF NPN BJT Transistor 5GHz 5V 6.5mA TO-236AB SMT T/R
Дополнительная информация
NPN RF BJT transistor designed for high-frequency applications, operating up to 5GHz. Features a 5V collector-emitter breakdown voltage and 6.5mA continuous collector current. This surface-mount component is housed in a TO-236AB package with tin plating and offers a minimum gain of 50. With a maximum power dissipation of 32mW, it operates across a temperature range of -65°C to 175°C.
| Gain | 15dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3mm |
| Weight | 0.00709oz |
| hFE Min | 50 |
| Polarity | NPN |
| Frequency | 5GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Output Power | 32mW |
| Package/Case | TO-236AB |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1 |
| Power Dissipation | 32mW |
| Number of Elements | 1 |
| Operating Frequency | 5000 MHz |
| Reach SVHC Compliant | No |
| Transition Frequency | 5GHz |
| Max Breakdown Voltage | 5V |
| Max Collector Current | 6.5mA |
| Max Power Dissipation | 32mW |
| Gain Bandwidth Product | 5GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 2V |
| Continuous Collector Current | 6.5mA |
| Collector Base Voltage (VCBO) | 8V |
| Collector-emitter Voltage-Max | 5V |
| Collector Emitter Voltage (VCEO) | 5V |
| Collector Emitter Breakdown Voltage | 5V |
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