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NPN RF Transistor, 10GHz Gain BW, 16V Vce, TO-236
Дополнительная информация
NPN wideband silicon RF transistor in a TO-236-3 package. Features a gain of 18dB and a gain bandwidth product of 10GHz. Offers a collector-emitter breakdown voltage of 12V and a continuous collector current of 5mA, with a maximum collector current of 30mA. Operates at 900 MHz with a transition frequency of 10GHz. This surface mount device is lead-free, RoHS compliant, and rated for automotive AEC-Q101 standards.
| Gain | 18dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | Automotive, AEC-Q101 |
| Weight | 0.00031oz |
| hFE Min | 60 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 3000 |
| Operating Frequency | 900 MHz |
| Transition Frequency | 10GHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 30mA |
| Max Power Dissipation | 450mW |
| Gain Bandwidth Product | 10GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Emitter Base Voltage (VEBO) | 2V |
| Continuous Collector Current | 5mA |
| Collector Base Voltage (VCBO) | 24V |
| Collector-emitter Voltage-Max | 16V |
| Collector Emitter Breakdown Voltage | 12V |
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