BFU530AR

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BFU530AR - NXP
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Краткое описание: RF Transistor NPN 11GHz 16V 450mW TO-236AB SMT
Производитель NXP
Статус производства Производится (ACTIVE)

Дополнительная информация

Automotive-grade NPN RF BJT transistor, surface mountable in a TO-236-3 package. Features a 16V collector-emitter voltage, 10mA continuous collector current, and 40mA maximum collector current. Offers a 11GHz gain bandwidth product and transition frequency, with a minimum hFE of 60 and 18dB gain. Operates across a -40°C to 150°C temperature range with 450mW maximum power dissipation.
Gain 18dB
RoHS Compliant
Mount Surface Mount
Series Automotive, AEC-Q101
Weight 0.00031oz
hFE Min 60
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case TO-236-3
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 3000
Operating Frequency 900 MHz
Transition Frequency 11GHz
Max Breakdown Voltage 12V
Max Collector Current 40mA
Max Power Dissipation 450mW
Gain Bandwidth Product 11GHz
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Emitter Base Voltage (VEBO) 2V
Continuous Collector Current 10mA
Collector Base Voltage (VCBO) 24V
Collector-emitter Voltage-Max 16V
Collector Emitter Breakdown Voltage 12V

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