BFU690F,115

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BFU690F,115 - NXP
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Краткое описание: NPN RF Transistor, 18GHz, 70mA, 5.5V, DFP, SMT
Производитель NXP
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN wideband silicon RF transistor in a DFP 4-pin package. Features a 18.5dB gain and 18GHz gain bandwidth product. Operates with a continuous collector current of 70mA and a maximum collector current of 100mA. Offers a maximum power dissipation of 230mW and a transition frequency of 18GHz. This surface mount component is RoHS compliant and lead-free, with an operating temperature range of -65°C to 150°C.
Gain 18.5dB
RoHS Compliant
Mount Surface Mount
Height 750um
hFE Min 90
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Output Power 230mW
Package/Case DFP
RoHS Compliant Yes
Package Quantity 1
Radiation Hardening No
Transition Frequency 18GHz
Max Breakdown Voltage 5.5V
Max Collector Current 100mA
Max Power Dissipation 230mW
Gain Bandwidth Product 18GHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 2.5V
Continuous Collector Current 70mA
Collector Base Voltage (VCBO) 16V
Collector-emitter Voltage-Max 5.5V
Collector Emitter Breakdown Voltage 5.5V

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