BFU710F,115
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Краткое описание:
RF Transistor NPN 110GHz 2.8V 10mA 136mW DFP SMT
Дополнительная информация
RF Transistor, NPN polarity, designed for surface mount applications. Features a 2.8V collector-emitter breakdown voltage and 10V collector-base voltage. Operates at frequencies up to 110 GHz with a transition frequency of 43 GHz. Offers a minimum gain of 14dB and a minimum hFE of 200. Maximum power dissipation is 136mW, with a continuous collector current of 10mA. Packaged in DFP with tin plating, suitable for tape and reel packaging.
| Gain | 14dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 200 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Output Power | 136mW |
| Package/Case | DFP |
| Contact Plating | Tin |
| Package Quantity | 1 |
| Power Dissipation | 136mW |
| Number of Elements | 1 |
| Operating Frequency | 110 GHz |
| Radiation Hardening | No |
| Transition Frequency | 43GHz |
| Max Breakdown Voltage | 2.8V |
| Max Collector Current | 10mA |
| Max Power Dissipation | 136mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 1V |
| Continuous Collector Current | 10mA |
| Collector Base Voltage (VCBO) | 10V |
| Collector-emitter Voltage-Max | 2.8V |
| Collector Emitter Breakdown Voltage | 2.8V |
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