BFU725F/N1,115
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Краткое описание:
RF Transistor NPN 55GHz 2.8V 40mA 136mW SO SM T/R
Дополнительная информация
High-frequency NPN RF bipolar junction transistor designed for surface mount applications. Features a 55 GHz transition frequency and 2.8V collector-emitter breakdown voltage. Offers a continuous collector current of 40mA and a maximum power dissipation of 136mW. Operates across a wide temperature range from -65°C to 150°C. Packaged in a 4-pin SO package on tape and reel, this RoHS compliant component is lead-free.
| Gain | 24dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 40 |
| Polarity | NPN |
| Frequency | 55GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Output Power | 136mW |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 136mW |
| Number of Elements | 1 |
| Operating Frequency | 55 GHz |
| Radiation Hardening | No |
| Transition Frequency | 55GHz |
| Max Breakdown Voltage | 2.8V |
| Max Collector Current | 40mA |
| Max Power Dissipation | 136mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 550mV |
| Continuous Collector Current | 40mA |
| Collector Base Voltage (VCBO) | 10V |
| Collector-emitter Voltage-Max | 2.8V |
| Collector Emitter Breakdown Voltage | 2.8V |
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