BG3130H6327XTSA1
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RF FET, N-Ch, 800MHz, 12V, 25mA, 24dB, SOT-363
Дополнительная информация
Ultra High Frequency RF Small Signal Field-Effect Transistor, featuring two N-Channel Silicon Metal-oxide Semiconductor FET elements. Operates in the 800MHz band with a gain of 24dB and a low noise figure of 1.3dB. Offers a continuous drain current of 25mA, drain-to-source breakdown voltage of 12V, and gate-to-source voltage of 6V. Packaged in a compact SOT-363 surface mount case with tin contact plating, this RoHS compliant component is supplied on tape and reel.
| Gain | 24dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.8mm |
| Length | 2mm |
| Polarity | N-CHANNEL |
| Frequency | 800MHz |
| Packaging | Tape and Reel |
| Noise Figure | 1.3dB |
| Package/Case | SOT-363 |
| Test Voltage | 5V |
| Current Rating | 25mA |
| RoHS Compliant | Yes |
| Voltage Rating | 8V |
| Contact Plating | Tin |
| Package Quantity | 3000 |
| Input Capacitance | 1.9pF |
| Power Dissipation | 200mW |
| Number of Elements | 2 |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 25mA |
| Drain to Source Voltage (Vdss) | 12V |
| Drain to Source Breakdown Voltage | 12V |
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