BG3130RH6327XTSA1
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Краткое описание:
RF FET, 2-Element, 800MHz, 12V Vdss, 25mA ID, N-Channel, SOT
Дополнительная информация
Ultra High Frequency RF Small Signal Field-Effect Transistor for demanding applications. Features N-Channel Silicon Metal-oxide Semiconductor FET technology with a 2-element configuration. Operates up to 800MHz with a gain of 24dB and a low noise figure of 1.3dB. Designed for surface mount with a SOT package, offering 12V drain-to-source breakdown voltage and 25mA continuous drain current. RoHS compliant and halogen-free for environmental considerations.
| Gain | 24dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.8mm |
| Length | 2mm |
| Polarity | N-CHANNEL |
| Frequency | 800MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Noise Figure | 1.3dB |
| Package/Case | SOT |
| Test Voltage | 5V |
| Current Rating | 25mA |
| RoHS Compliant | Yes |
| Voltage Rating | 8V |
| Contact Plating | Tin |
| Package Quantity | 3000 |
| Input Capacitance | 1.9pF |
| Power Dissipation | 200mW |
| Number of Elements | 2 |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 6V |
| Continuous Drain Current (ID) | 25mA |
| Drain to Source Voltage (Vdss) | 12V |
| Drain to Source Breakdown Voltage | 12V |
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