BLF1046,112

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BLF1046,112 - NXP
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Краткое описание: RF MOSFET N-CH 65V 4.5A 960MHz 45W LDMOST
Производитель NXP
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel RF MOSFET, 65V drain-source breakdown voltage, 4.5A continuous drain current, and 45W maximum output power. Features 14dB gain at 960MHz, 300mΩ drain-source resistance, and 46pF input capacitance. Operates from -65°C to 200°C, with a maximum operating frequency of 1GHz. Packaged in a 3-pin LDMOST configuration for screw mounting.
Gain 14dB
RoHS Compliant
Mount Screw
Width 5.97mm
Height 4.67mm
Length 20.45mm
Polarity N-CHANNEL
Frequency 960MHz
Lead Free Lead Free
Packaging Tray
Output Power 45W
Test Voltage 26V
Max Frequency 1GHz
Current Rating 4.5A
RoHS Compliant Yes
Voltage Rating 65V
Max Output Power 45W
Package Quantity 20
Input Capacitance 46pF
Number of Elements 1
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Drain to Source Resistance 300mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 4.5A
Drain to Source Voltage (Vdss) 65V
Drain to Source Breakdown Voltage 65V

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