BLF645,112
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Краткое описание:
RF FET N-CH 65V 32A 1300MHz LDMOST 5-Pin
Дополнительная информация
N-channel RF FET transistor with a 65V drain-source voltage and 32A continuous drain current. Features a 5-pin LDMOST ceramic package, suitable for screw mounting. Operates from 1MHz to 1300MHz with a typical power gain of 18dB and 100W typical output power. Supports 2-tone Class-AB and CW Class-AB modes of operation, with a wide temperature range of -65°C to 200°C.
| PCB | 5 |
| ECCN | EAR99 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Mounting | Screw |
| Pin Count | 5 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Output Power | 100(Typ)W |
| Package/Case | LDMOST |
| Configuration | Dual Common Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Ceramic |
| Maximum Frequency | 1300MHz |
| Minimum Frequency | 1MHz |
| Mode of Operation | 2-Tone Class-AB|CW Class-AB |
| Package Width (mm) | 10.91(Max) |
| Typical Power Gain | 18dB |
| Package Height (mm) | 5.77(Max) |
| Package Length (mm) | 34.16(Max) |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 65V |
| Typical Input Capacitance @ Vds | 69@32VpF |
| Maximum Continuous Drain Current | 32A |
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