BLF647P,112
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Краткое описание:
RF FET N-CH 65V 200W 10-1500MHz CDFM 5-Pin
Дополнительная информация
N-channel RF FET transistor in a 5-pin CDFM ceramic package, designed for high-power applications. Features a maximum drain-source voltage of 65V and operates across a frequency range of 10MHz to 1500MHz. This dual common source, enhancement mode transistor delivers up to 200W output power with typical power gain up to 19dB. Suitable for pulsed RF, Class-AB, CW Class-B, and 2-tone Class-AB modes of operation, with a wide operating temperature range from -65°C to 200°C. Mounting is via screw, and it offers a typical input capacitance of 78pF at 32V.
| PCB | 5 |
| ECCN | EAR99 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Mounting | Screw |
| Pin Count | 5 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Output Power | 200W |
| Package/Case | CDFM |
| Configuration | Dual Common Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Ceramic |
| Maximum Frequency | 1500MHz |
| Minimum Frequency | 10MHz |
| Mode of Operation | Pulsed RF|Class-AB|CW Class-B|2-Tone Class-AB |
| Package Width (mm) | 9.91(Max) |
| Typical Power Gain | 18|18|18|19dB |
| Package Height (mm) | 4.75(Max) |
| Package Length (mm) | 34.16(Max) |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 65V |
| Typical Input Capacitance @ Vds | 78@32VpF |
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