BLF6G20-45,112
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Краткое описание:
RF MOSFET N-CH 65V 13A 2GHz LDMOS
Дополнительная информация
N-channel RF MOSFET transistor designed for high-frequency applications, operating up to 2GHz with a maximum output power of 2.5W. Features a 65V drain-to-source breakdown voltage and a continuous drain current rating of 13A. Offers a typical gain of 19.2dB at 1.88GHz and a low on-resistance of 200mR. This LDMOS technology component is RoHS compliant and lead-free, suitable for screw mounting.
| Gain | 19.2dB |
| RoHS | Compliant |
| Mount | Screw |
| Polarity | N-CHANNEL |
| Frequency | 1.88GHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Technology | LDMOS |
| Output Power | 2.5W |
| Test Voltage | 28V |
| Max Frequency | 2GHz |
| Min Frequency | 1.805GHz |
| Current Rating | 13A |
| RoHS Compliant | Yes |
| Voltage Rating | 65V |
| Max Output Power | 2.5W |
| Package Quantity | 20 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 13V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 65V |
| Drain to Source Breakdown Voltage | 65V |
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