BLF884P,112
Производится
Увеличить
Краткое описание:
RF MOSFET 104V 19A 860MHz N-CH
Дополнительная информация
N-channel RF MOSFET transistor designed for high-power applications. Features a 104V drain-to-source breakdown voltage and a low 240mΩ drain-to-source resistance. Operates efficiently at frequencies up to 860MHz with a 21dB gain and 150W output power. Supports a continuous drain current of 19A and operates across a wide temperature range from -65°C to 150°C. This lead-free, RoHS-compliant component is suitable for screw mounting.
| Gain | 21dB |
| RoHS | Compliant |
| Mount | Screw |
| Polarity | N-CHANNEL |
| Frequency | 860MHz |
| Lead Free | Lead Free |
| Packaging | Tray |
| Output Power | 150W |
| Test Voltage | 42V |
| Max Frequency | 860MHz |
| Min Frequency | 470MHz |
| RoHS Compliant | Yes |
| Package Quantity | 60 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 240mR |
| Gate to Source Voltage (Vgs) | 11V |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | 104V |
| Drain to Source Breakdown Voltage | 104V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
