BLP27M810Z
Краткое описание:
10 W LDMOS power transistor, HF to 2700 MHz
Дополнительная информация
The BLP27M810 is a 10 W LDMOS power transistor designed for broadcast and Industrial, Scientific and Medical (ISM) applications. This driver transistor is designed for high power CW applications and is assembled in a high performance thermally enhanced plastic package. It features high efficiency, high power gain, and excellent ruggedness up to a frequency of 2700 MHz.
| P1dB | 10W |
| RoHS | Compliant to Directive 2002/95/EC |
| Frequency Range | 10 - 2700MHz |
| Power Gain (Gp) | 18.4dB |
| Drain Efficiency | 50.6% |
| Supply Voltage (Vds) | 32V |
| Gate-Source Threshold Voltage | 1.9V |
| Drain-Source Breakdown Voltage | 65V |
| Thermal Resistance (junction-to-case) | 3.2K/W |