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Краткое описание:
NPN Phototransistor 825nm 32V 50mA Radial Through Hole
Дополнительная информация
NPN phototransistor chip for optical sensing, featuring a 32V collector-emitter breakdown voltage and a 50mA maximum collector current. This component operates within a -40°C to 100°C temperature range, with a 100mW maximum power dissipation. It utilizes a clear, domed lens style and is designed for through-hole mounting with a 2-pin radial package. The phototransistor is sensitive to 825nm wavelengths and has a fall time of 5µs.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 2.9mm |
| Length | 3.3mm |
| Polarity | NPN |
| Fall Time | 5us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Color | Clear |
| Lens Style | Domed, TRANSPARENT, WATER CLEAR |
| Wavelength | 825nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 12° |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| Package Material | SILICON |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Collector Current | 50mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 32V |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 300mV |
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