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NPN Phototransistor, 850nm, 70V, 50mA, TO-18
Дополнительная информация
NPN silicon phototransistor with 850nm infrared sensitivity. Features a 70V collector-emitter breakdown voltage and 50mA maximum collector current. Housed in a 3-pin TO-18 package with a domed lens for top-view orientation. Operates from -40°C to 125°C with 250mW power dissipation. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.5mm |
| Height | 6.15mm |
| Length | 5.5mm |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | TO-18 |
| Viewing Angle | 10° |
| RoHS Compliant | Yes |
| DC Rated Voltage | 70V |
| Package Material | SILICON |
| Package Quantity | 1000 |
| Power Consumption | 250mW |
| Power Dissipation | 250mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Collector Current | 50mA |
| Max Power Dissipation | 250mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 150mV |
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