BPW96C
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Краткое описание:
NPN Phototransistor, 850nm IR, 70V VCEO, 50mA, Through Hole
Дополнительная информация
NPN phototransistor, 850nm wavelength, 70V collector-emitter breakdown voltage, and 50mA max collector current. Features a 2-pin radial package with a clear, domed lens and a 20° viewing angle. Operates within a -40°C to 100°C temperature range, with 150mW max power dissipation. RoHS compliant and supplied in bulk packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.75mm |
| Height | 8.6mm |
| Length | 5.75mm |
| Polarity | NPN |
| Fall Time | 2.3us |
| Packaging | Bulk |
| Lens Color | Clear |
| Lens Style | Domed, TRANSPARENT, Clear |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 20° |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| Package Material | SILICON |
| Package Quantity | 4000 |
| Power Consumption | 150mW |
| Power Dissipation | 150mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Breakdown Voltage | 70V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 300mV |
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