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Краткое описание:
NPN Phototransistor 850nm 35V 50mA Through Hole
Дополнительная информация
NPN phototransistor with radial package, through-hole mounting, and transparent lens. Features 35V collector-emitter breakdown voltage, 50mA max collector current, and 90mW max power dissipation. Operates across a -40°C to 80°C temperature range with an 850nm wavelength sensitivity and a 36° viewing angle. Fall time is 7µs.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 3.6mm |
| Length | 2.4mm |
| Polarity | NPN |
| Fall Time | 7us |
| Packaging | Bulk |
| Lens Style | TRANSPARENT |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 36° |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 90mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 90mW |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 32V |
