BPX 84
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Краткое описание:
NPN Phototransistor Array, 3-Element, 35V, 850nm, SDIP
Дополнительная информация
NPN phototransistor array featuring three elements in a transparent, flat lens SDIP package. Offers a 35V collector-emitter breakdown voltage and a maximum collector current of 50mA. Operates across a -40°C to 80°C temperature range with 90mW power dissipation. Through-hole mounting and a 36° viewing angle are provided. This RoHS compliant component is designed for top-view orientation.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.1mm |
| Height | 3.6mm |
| Length | 7.4mm |
| Polarity | NPN |
| Fall Time | 6us |
| Lens Style | Flat, TRANSPARENT |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | SDIP |
| Viewing Angle | 36° |
| RoHS Compliant | Yes |
| Package Material | SILICON |
| Package Quantity | 150 |
| Power Dissipation | 90mW |
| Number of Elements | 3 |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 90mW |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
