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Краткое описание:
3-Ch NPN Phototransistor, 35V, 50mA, 850nm, SDIP, Through Hole
Дополнительная информация
Three-channel NPN phototransistor array in a through-hole SDIP package. Features a 35V collector-emitter breakdown voltage, 50mA maximum collector current, and 90mW maximum power dissipation. Operates across a -40°C to 80°C temperature range with a 6µs fall time and 36° viewing angle. Sensitive to 850nm wavelengths, this RoHS compliant component has a domed, transparent lens.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.1mm |
| Height | 3.6mm |
| Length | 7.4mm |
| Polarity | NPN |
| Fall Time | 6us |
| Packaging | Bulk |
| Lens Color | Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | SDIP |
| Viewing Angle | 36° |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Material | SILICON |
| Package Quantity | 100 |
| Power Dissipation | 90mW |
| Number of Channels | 3 |
| Number of Elements | 3 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 90mW |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
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