BPX 88
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Краткое описание:
Phototransistor NPN 850nm 3-Element DIP 35V 50mA
Дополнительная информация
NPN phototransistor array featuring three elements for optical sensing applications. This through-hole component operates with a 35V collector-emitter breakdown voltage and a maximum collector current of 50mA. It is sensitive to 850nm wavelengths with a 36° viewing angle, housed in a clear, domed, transparent DIP package. Maximum power dissipation is 90mW, with an operating temperature range of -40°C to 80°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.1mm |
| Height | 3.6mm |
| Length | 7.4mm |
| Polarity | NPN |
| Fall Time | 6us |
| Lens Color | Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | DIP |
| Viewing Angle | 36° |
| RoHS Compliant | Yes |
| Package Material | SILICON |
| Package Quantity | 100 |
| Power Dissipation | 90mW |
| Number of Elements | 3 |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 90mW |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
