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NPN Phototransistor, TO-18, 50V, 880nm, 50mA
Дополнительная информация
NPN phototransistor in a TO-18 package, featuring a 50V collector-emitter breakdown voltage and a maximum collector current of 50mA. This optical sensor operates within a temperature range of -40°C to 125°C, with a 220mW power dissipation. The component utilizes a domed lens style and is designed for through-hole mounting, emitting at a wavelength of 880nm with an 80° viewing angle. RoHS compliant and packaged in bulk.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.6mm |
| Height | 5.5mm |
| Length | 5.6mm |
| Polarity | NPN |
| Fall Time | 12000ns |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | TO-18 |
| Viewing Angle | 80° |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Material | SILICON |
| Package Quantity | 1000 |
| Power Dissipation | 220mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 50mA |
| Max Power Dissipation | 220mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
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