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NPN Phototransistor 880nm 50V TO-18
Дополнительная информация
NPN phototransistor with 880nm wavelength, housed in a TO-18 package with a domed lens. Features a 50V collector-emitter breakdown voltage and a maximum collector current of 50mA. Operates within a temperature range of -40°C to 125°C, with a power dissipation of 220mW. This through-hole mounted component offers a 15µs fall time and a 80° viewing angle, with tin-matte contact plating.
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 5.5mm |
| Diameter | 4.8mm |
| Polarity | NPN |
| Fall Time | 15us |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 880nm |
| Orientation | Top View |
| Package/Case | TO-18 |
| Viewing Angle | 80° |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Material | SILICON |
| Package Quantity | 1000 |
| Power Dissipation | 220mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 220mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 200mV |
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