BPX65
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PIN Phototransistor, 850nm, 50V, 100mA, TO-18
Дополнительная информация
NPN & Darlington Phototransistor, PIN Diode Type, 850nm wavelength, 0.55A/W responsivity, and 12ns response time. Features a TO-18 package with a flat lens, through-hole mounting, and a 80° viewing angle. Operates with a maximum forward current of 100mA and a maximum reverse voltage of 50V. Offers a power dissipation of 250mW and a temperature range of -40°C to 125°C.
| RoHS | Compliant |
| Mount | Through Hole, PCB |
| Width | 5.6mm |
| Height | 5.5mm |
| Length | 5.6mm |
| Fall Time | 12ns |
| Packaging | Bulk |
| Diode Type | PIN |
| Lens Style | Flat |
| Wavelength | 850nm |
| Package/Case | TO-18 |
| Responsivity | 0.55A/W |
| Response Time | 12ns |
| Viewing Angle | 80° |
| RoHS Compliant | Yes |
| Forward Current | 100mA |
| Package Quantity | 120 |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reverse Voltage (DC) | 20V |
| Max Power Dissipation | 250mW |
| Max Reverse Voltage (DC) | 50V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 50V |
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