BPX81-2/3
Снят с производства
Краткое описание:
NPN Phototransistor 850nm 32V 50mA Radial TH
Дополнительная информация
NPN phototransistor with 850nm peak sensitivity, featuring a 35V collector-emitter voltage and 50mA maximum collector current. This through-hole component is housed in a radial package with a clear, domed lens and a 36° viewing angle. Operating across a -40°C to 80°C temperature range, it offers a 6µs fall time and 90mW maximum power dissipation. The device is RoHS compliant and constructed with a silicon package.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 3.6mm |
| Length | 2.4mm |
| Polarity | NPN |
| Fall Time | 6us |
| Packaging | Bulk |
| Lens Color | Clear |
| Lens Style | Domed |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 36° |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Material | SILICON |
| Package Quantity | 1000 |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 90mW |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Breakdown Voltage | 32V |
