BPX81-3/4
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Краткое описание:
NPN Phototransistor 850nm 32V 50mA Radial TH
Дополнительная информация
NPN phototransistor with a 36° viewing angle and 850nm wavelength. Features a radial package for through-hole mounting, a domed clear lens, and a maximum collector current of 50mA. Operates within a temperature range of -40°C to 80°C with a maximum power dissipation of 90mW. Collector-emitter breakdown voltage is 32V, and fall time is 8µs. This component is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.4mm |
| Height | 3.6mm |
| Length | 2.4mm |
| Polarity | NPN |
| Fall Time | 8us |
| Packaging | Bulk |
| Lens Color | Clear |
| Lens Style | Domed |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 36° |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Material | SILICON |
| Package Quantity | 1000 |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 90mW |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Breakdown Voltage | 32V |
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