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NPN Phototransistor, 35V, 100mA, 830nm, TO-18
Дополнительная информация
NPN phototransistor in a TO-18 package, featuring a 35V collector-emitter breakdown voltage and a maximum collector current of 100mA. This component offers a fast fall time of 9µs and operates across a temperature range of -40°C to 125°C. With a 200mW power dissipation and a 16° viewing angle, it is designed for through-hole mounting and is RoHS compliant. The domed lens style and 830nm wavelength are optimized for optical sensing applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.6mm |
| Height | 6.2mm |
| Length | 5.6mm |
| Polarity | NPN |
| Fall Time | 9us |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Style | Domed |
| Wavelength | 830nm |
| Orientation | Top View |
| Package/Case | TO-18 |
| Viewing Angle | 16° |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Material | SILICON |
| Package Quantity | 1000 |
| Power Dissipation | 200mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Saturation Voltage | 160mV |
