BS170

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BS170 - Onsemi
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Краткое описание: N-Channel JFET, 60V, 500mA, 5Ω, TO-92, Through Hole
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Single N-Channel JFET, designed for small signal applications, features a 60V drain-source breakdown voltage and a continuous drain current of 500mA. This through-hole component offers a maximum drain-source on-resistance of 5 Ohms and a typical gate-source voltage of 2.1V. Encased in a TO-92 package with copper, tin, and silver contact plating, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 830mW.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.2mm
Voltage 60V
Polarity N-CHANNEL
Lead Free Lead Free
Packaging Bulk
Rds On Max 5R
Nominal Vgs 2.1V
Package/Case TO-92
Current Rating 500mA
RoHS Compliant Yes
Contact Plating Copper, Tin, Silver
DC Rated Voltage 60V
Package Quantity 2000
Input Capacitance 40pF
Power Dissipation 830mW
Threshold Voltage 2.1V
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Power Dissipation 830mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.2R
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 500mA
Drain to Source Voltage (Vdss) 60V
Drain-source On Resistance-Max 5R
Drain to Source Breakdown Voltage 60V

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