BSB014N04LX3 G
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Краткое описание:
40V 36A N-CH Power MOSFET, WDSON, 7-Pin SMT
Дополнительная информация
N-channel Power MOSFET, 40V drain-source voltage, 36A continuous drain current, and 2800mW power dissipation. Features OptiMOS process technology, single quad drain dual source configuration, and enhancement mode channel. Mounted on a 7-pin WDSON lead-frame SMT package with copper material, measuring 5.5mm x 4.93mm x 0.52mm. Operates from -40°C to 150°C with a low 1.4mΩ drain-source resistance at 10V.
| PCB | 7 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 7 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | WDSON |
| AEC Qualified | No |
| Configuration | Single Quad Drain Dual Source |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Copper |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 4.93 |
| Process Technology | OptiMOS |
| Package Family Name | SON |
| Package Height (mm) | 0.52 |
| Package Length (mm) | 5.5 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.65 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2800mW |
| Min Operating Temperature | -40°C |
| Typical Gate Charge @ 10V | 148nC |
| Typical Gate Charge @ Vgs | 148@10V|[email protected]nC |
| Typical Output Capacitance | 2400pF |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 1.4@10VmOhm |
| Typical Input Capacitance @ Vds | 12700@20VpF |
| Maximum Continuous Drain Current | 36A |
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