BSC009NE2LSATMA1

Производится
BSC009NE2LSATMA1 - Infineon
Увеличить
Краткое описание: N-Channel MOSFET, 25V, 100A, 0.75mR, TDSON-8
Производитель Infineon
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 25V Vds, 100A continuous drain current, and 0.75mΩ Rds(on). Features include a 150°C maximum operating temperature, 96W power dissipation, and 5.8nF input capacitance. This surface-mount device is packaged in TDSON-8 and supplied on tape and reel. It offers a 19ns fall time and 48ns turn-off delay time.
RoHS Compliant
Mount Surface Mount
Height 1mm
Series OptiMOS™
Polarity N-CHANNEL
Fall Time 19ns
Lead Free Contains Lead
Packaging Tape and Reel
Rds On Max 0.9mR
Halogen Free Halogen Free
RoHS Compliant Yes
Package Quantity 5000
Input Capacitance 5.8nF
Power Dissipation 96W
Number of Channels 1
Turn-Off Delay Time 48ns
Max Power Dissipation 96W
Max Dual Supply Voltage 25V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 0.75mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Drain to Source Voltage (Vdss) 25V
Drain to Source Breakdown Voltage 25V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.