BSC010NE2LSIATMA1

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BSC010NE2LSIATMA1 - Infineon
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Краткое описание: N-Channel MOSFET, 25V, 100A, 1.05mR Rds(on), TDSON-8
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 25V drain-source voltage and 100A continuous drain current. Offers low on-state resistance of 1.05mΩ at 10Vgs. Designed for surface mount applications with a TDSON-8 plastic package. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 96W. Halogen-free and RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
Lead Free Contains Lead
Rds On Max 1.05mR
Halogen Free Halogen Free
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 5000
Input Capacitance 4.2nF
On-State Resistance 1.05mR
Max Power Dissipation 96W
Max Dual Supply Voltage 25V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Drain to Source Voltage (Vdss) 25V

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