BSC026N04LSATMA1

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BSC026N04LSATMA1 - Infineon
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Краткое описание: 40V 23A N-CH MOSFET, 2.6mR RdsOn, 150°C, SMT
Производитель Infineon
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel MOSFET, 40V drain-source voltage, 23A continuous drain current, and 2.6mΩ maximum on-state resistance. Features include 150°C maximum operating temperature, 63W power dissipation, and surface mount packaging in tape and reel. Halogen-free and RoHS compliant with tin contact plating.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
Lead Free Contains Lead
Packaging Tape and Reel
Rds On Max 2.6mR
Halogen Free Halogen Free
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 5000
Input Capacitance 2.3nF
Power Dissipation 63W
On-State Resistance 2.6mR
Max Power Dissipation 63W
Max Dual Supply Voltage 40V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.1mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Drain to Source Voltage (Vdss) 40V

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