BSC028N06NSATMA1
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Краткое описание:
N-Channel MOSFET, 60V, 2.8mR Rds On, 100A ID
Дополнительная информация
N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 2.8mΩ on-state resistance. This silicon Metal-oxide Semiconductor FET offers a continuous drain current of 100A and a maximum power dissipation of 83W. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 150°C and includes features like 11ns turn-on delay and 8ns fall time. Packaged in a GREEN, PLASTIC, SUPERSO8 (TDSON-8) with Tin contact plating, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 2.8mR |
| Halogen Free | Halogen Free |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1 |
| Input Capacitance | 2.7nF |
| Power Dissipation | 83W |
| Turn-On Delay Time | 11ns |
| On-State Resistance | 2.8mR |
| Turn-Off Delay Time | 19ns |
| Max Power Dissipation | 83W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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