BSC032NE2LSATMA1
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Краткое описание:
Power Field-Effect Transistor, 22A I(D), 25V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Дополнительная информация
Power Field-Effect Transistor, 22A I(D), 25V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
| RoHS | Compliant |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 2.2ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 3.2mR |
| Halogen Free | Halogen Free |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 1 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 37W |
| On-State Resistance | 3.2mR |
| Turn-Off Delay Time | 15ns |
| Max Power Dissipation | 78W |
| Max Dual Supply Voltage | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 84A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain to Source Breakdown Voltage | 25V |
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