BSC050N03LSGATMA1

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BSC050N03LSGATMA1 - Infineon
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Краткое описание: 30V N-Channel MOSFET, 80A ID, 5mR Rds On, TDSON-8
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 30V Vdss, 80A continuous drain current, and 4.2mR drain-to-source resistance. Features 5mR Rds On, 2.2V threshold voltage, and 2.8nF input capacitance. Designed for surface mount applications with a TDSON-8 plastic package. Operates from -55°C to 150°C with 50W max power dissipation. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
Lead Free Contains Lead
Packaging Tape and Reel
Rds On Max 5mR
Halogen Free Halogen Free
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 5000
Input Capacitance 2.8nF
Power Dissipation 2.5W
Threshold Voltage 2.2V
Number of Elements 1
On-State Resistance 5mR
Reach SVHC Compliant No
Max Power Dissipation 50W
Max Dual Supply Voltage 30V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 4.2mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 30V

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