BSC070N10NS3GATMA1

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BSC070N10NS3GATMA1 - Infineon
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Краткое описание: N-Channel MOSFET, 100V, 90A, 7mR RDS(on), Surface Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 100V Vds, 90A Continuous Drain Current, 7mΩ Rds On. Features 2.7V Threshold Voltage, 4nF Input Capacitance, and 114W Max Power Dissipation. Designed for surface mount applications with Tin contact plating and TDSON-8 plastic packaging. Operates from -55°C to 150°C, RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series OptiMOS™
Lead Free Contains Lead
Packaging Cut Tape
Rds On Max 7mR
Halogen Free Halogen Free
RoHS Compliant Yes
Contact Plating Tin
Input Capacitance 4nF
Power Dissipation 114W
Threshold Voltage 2.7V
Number of Elements 1
Reach SVHC Compliant No
Max Power Dissipation 114W
Max Dual Supply Voltage 100V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 90A
Drain to Source Voltage (Vdss) 100V

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