BSC0901NSATMA1

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BSC0901NSATMA1 - Infineon
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Краткое описание: N-Channel MOSFET, 30V, 100A, 1.6mR RDS(on), TDSON-8
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 30V Vdss, 100A continuous drain current, and 1.6mR drain-to-source resistance. Features include 1.9mR on-state resistance, 4.8ns fall time, 5.4ns turn-on delay, and 28ns turn-off delay. Operates from -55°C to 150°C with 69W power dissipation. This surface mount device is RoHS compliant and Halogen Free.
RoHS Compliant
Mount Surface Mount
Fall Time 4.8ns
Lead Free Contains Lead
Halogen Free Halogen Free
RoHS Compliant Yes
Package Quantity 5000
Input Capacitance 2.8nF
Power Dissipation 69W
Number of Elements 1
Turn-On Delay Time 5.4ns
On-State Resistance 1.9mR
Turn-Off Delay Time 28ns
Max Dual Supply Voltage 30V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.6mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Drain to Source Voltage (Vdss) 30V

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